Advanced Power MOSFET
Description
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Low RDS(ON): 0.254Ω (Typ.)
IRFS350A
BVDSS = 400 V RDS(on) = 0.3Ω ID = 11.5 A
TO-3PF
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum...
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