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GT60M322

Toshiba
Part Number GT60M322
Manufacturer Toshiba
Description Silicon N-Channel IGBT
Published Sep 5, 2005
Detailed Description GT60M322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M322 Voltage Resonance Inverter Switching...
Datasheet PDF File GT60M322 PDF File

GT60M322
GT60M322

Overview
GT60M322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M322 Voltage Resonance Inverter Switching Application Current Resonance Inverter Switching Application • • • • • Enhancement mode type High speed : tf = 0.
15 µs (typ.
) (IC = 60 A) Low saturation voltage : VCE (sat) = 2.
3 V (typ.
) (IC = 60 A) FRD included between emitter and collector TO-3P(LH) (Toshiba package name) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms DC Pulsed @ Tc = 100°C @ Tc = 25°C Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 950 ±25 60 120 25 50 76 190 150 −55 to 150 Unit V V A JEDEC A ― ― 2-21F2C Diode forward cu...


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