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GT60M323

Toshiba
Part Number GT60M323
Manufacturer Toshiba
Description Silicon N-Channel IGBT
Published Sep 5, 2005
Detailed Description GT60M323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M323 Voltage Resonance Inverter Switching...
Datasheet PDF File GT60M323 PDF File

GT60M323
GT60M323

Overview
GT60M323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M323 Voltage Resonance Inverter Switching Application Unit: mm • • • • • Enhancement mode type High speed : tf = 0.
09 µs (typ.
) (IC = 60 A) Low saturation voltage : VCE (sat) = 2.
3 V (typ.
) (IC = 60 A) FRD included between emitter and collector TO-3P(LH) (Toshiba package name) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current Pulsed collector current Diode forward current Collector power dissipation Junction temperature Storage temperature range DC Pulsed @ Tc = 100°C @ Tc = 25°C @ Tc = 100°C @ Tc = 25°C Symbol VCES VGES IC ICP IF IFP PC Tj Tst...


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