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FDB8880

N-Channel MOSFET

Description

FDP8880 / FDB8880 0 May 2008 FDP8880 / FDB8880 N-Channel PowerTrench® MOSFET tmM 30V, 54A, 11.6mΩ Features rDS(ON) = 14.5mΩ, VGS = 4.5V, ID = 40A rDS(ON) = 11.6mΩ, VGS = 10V, ID = 40A High performance trench technology for extremely low General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC c...

Fairchild Semiconductor

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