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SSM3K14T

Part Number	SSM3K14T
Manufacturer	Toshiba Semiconductor
Description	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
Published	Sep 28, 2005
Detailed Description	SSM3K14T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) SSM3K14T DC-DC Converter High Speed Switc...
Datasheet	SSM3K14T PDF File

Overview

SSM3K14T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) SSM3K14T DC-DC Converter High Speed Switching Applications · · · Small Package Low ON-resistance: Ron = 39 mΩ (max) (@VGS = 10 V) : Ron = 57 mΩ (max) (@VGS = 4.
5 V) High speed: ton = 24 ns (typ.
) : toff = 19 ns (typ.
) Unit: mm Maximum Ratings (Ta = 25°C) Characteristic Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 2) PD (Note 1) t = 10 s Tch Tstg Rating 30 ±20 4.
0 8.
0 0.
7 1.
25 150 -55~150 Unit V V A Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range W °C °C JEDEC JEITA TOSHIBA ― ― 2-3S1A Note 1: Mounted on FR4 board 2 (25.
4 mm ´ 25...

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