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IRFZ44N

NXP
Part Number IRFZ44N
Manufacturer NXP
Description N-Channel MOSFET
Published Sep 29, 2005
Detailed Description www.DataSheet4U.com Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor GE...
Datasheet PDF File IRFZ44N PDF File

IRFZ44N
IRFZ44N

Overview
www.
DataSheet4U.
com Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology.
The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV.
It is intended for use in switched mode power supplies and general purpose switching applications.
IRFZ44N QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX.
55 49 110 175 22 UNIT V A W ˚C mΩ PINNING - TO220AB PIN 1 2 3 tab gate drain source drain DESCRIPTION PIN CONFIGURATION tab SYMBOL d g s 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID IDM Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate v...


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