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FLM0910-12F

ETC
Part Number FLM0910-12F
Manufacturer ETC
Description X-Band Internally Matched FET
Published Dec 29, 2005
Detailed Description FLM0910-12F X-Band Internally Matched FET FEATURES ・High Output Power: P1dB=40.5dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・...
Datasheet PDF File FLM0910-12F PDF File

FLM0910-12F
FLM0910-12F

Overview
FLM0910-12F X-Band Internally Matched FET FEATURES ・High Output Power: P1dB=40.
5dBm(Typ.
) ・High Gain: G1dB=7.
0dB(Typ.
) ・High PAE: ηadd=25%(Typ.
) ・Broad Band: 9.
5~10.
5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM0910-12F is a power GaAs FET that is internally matched for standard communication and radar bands to provide optimum power and gain in a 50Ω system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PTot Tstg Tch Rating 15 -5 57.
6 -65 to +175 175 Unit V V W oC oC RECOMMENDED OPERATING CONDITION (Case Temperature Tc=2...


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