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IRF7406

International Rectifier
Part Number IRF7406
Manufacturer International Rectifier
Description HEXFET POWER MOSFET
Published Jan 25, 2006
Detailed Description PD - 91247D IRF7406 HEXFET® Power MOSFET Generation V Technology Ultra Low On-Resistance l P-Channel Mosfet l Surface M...
Datasheet PDF File IRF7406 PDF File

IRF7406
IRF7406


Overview
PD - 91247D IRF7406 HEXFET® Power MOSFET Generation V Technology Ultra Low On-Resistance l P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S 1 8 7 A D D D D S S G 2 VDSS = -30V RDS(on) = 0.
045Ω 3 6 4 5 Top View Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
With these improvements, multiple devices can be used in an application with dramatically reduced board space.
The package is designed for vapor phase,...



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