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IRF740A

International Rectifier
Part Number IRF740A
Manufacturer International Rectifier
Description Power MOSFET
Published Mar 30, 2006
Detailed Description PD- 92004 SMPS MOSFET IRF740A Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High ...
Datasheet PDF File IRF740A PDF File

IRF740A
IRF740A

Overview
PD- 92004 SMPS MOSFET IRF740A Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching HEXFET® Power MOSFET VDSS Rds(on) max ID 400V 0.
55Ω 10A Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss specified ( See AN 1001) TO-220AB G D S Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max.
10 6.
3 40 125 1.
0 ± 30 5.
9 -55 to + 150 300 (1.
6mm from case ) 10 lbf•in (1.
1N•m) Units A W W/°C V V/ns °C Typical SMPS Topologies: l Single transistor Flyback Xfmr.
Reset l Single Transistor Forward Xfmr.
Reset ( Both for US Line Input only ) Notes  through … are on page 8 www.
irf.
com 1 9/14/99 IRF740A Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient RDS(on) VGS(th) Static Drain-to-Source On-Resistance Gate Threshold Voltage IDSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage IGSS Gate-to-Source Reverse Leakage Min.
Typ.
Max.
Units Conditions 400 ––– ––– V VGS = 0V, ID = 250µA ––– 0.
48 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.
55 Ω VGS = 10V, ID = 6.
0A „ 2.
0 ––– 4.
0 V VDS = VGS, ID = 250µA ––– ––– 25 ––– ––– 250 µA VDS = 400V, VGS = 0V VDS = 320V, VGS = 0V, TJ = 125°C ––– ––– 100 nA VGS = 30V ––– ––– -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units Conditions gfs Forward Transconductance Qg Total Gate Charge 4...


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