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JDV2S05E

Toshiba Semiconductor
Part Number JDV2S05E
Manufacturer Toshiba Semiconductor
Description VCO
Published Jan 4, 2007
Detailed Description www.DataSheet4U.com JDV2S05E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S05E VCO for UHF band • • • Small Package...
Datasheet PDF File JDV2S05E PDF File

JDV2S05E
JDV2S05E

Overview
www.
DataSheet4U.
com JDV2S05E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S05E VCO for UHF band • • • Small Package High Capacitance Ratio : C1V/C4V = 1.
9 (typ.
) Low Series Resistance : rs = 0.
30 Ω (typ.
) Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 125 −55~125 Unit V °C °C Weight: 0.
0014 g 000707EAA1 • TOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizing T...


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