Advanced Power MOSFET
Description
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Advanced Power MOSFET
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current : 10 µA (Max.) @ VDS = 400V ♦ Low RDS(ON) : 0.254 Ω (Typ.)
IRF750A
BVDSS = 400 V RDS(on) = 0.3 Ω ID = 15 A
TO-220
1 2 3
1.Gate 2. Drain 3. S...
Fairchild Semiconductor
IRF750A PDF File
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