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RD12MVP1

Part Number	RD12MVP1
Manufacturer	Mitsubishi Electric
Description	Silicon MOSFET Power Transistor
Published	Feb 15, 2007
Detailed Description	www.DataSheet4U.com MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD12MVP1 (...
Datasheet	RD12MVP1 PDF File

Overview

www.
DataSheet4U.
com MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD12MVP1 (a) 0.
2+/-0.
05 0.
65+/-0.
2 (c) (b) (b) 7.
0+/-0.
2 8.
0+/-0.
2 6.
2+/-0.
2 5.
6+/-0.
2 (d) 4.
2+/-0.
2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W DESCRIPTION RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
OUTLINE DRAWING FEATURES •High Power Gain Pout>10W, Gp>13dB@Vdd=7.
2V,f=175MHz •High Efficiency: 55%min.
(175MHz) •No gate protection diode INDEX MARK [Gate] (3.
6) (4.
5) 0.
95+/-0.
2 2.
6+/-0.
2 TOP VIEW DETAIL A SIDE VIEW 1.
8+/-0.
1 BOTTOM VIEW Terminal No.
(a)Drain [output] (b)Source [GND] (c)Gate [input] (...

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