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IRFPS3810

International Rectifier
Part Number IRFPS3810
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published May 30, 2007
Detailed Description PD - 93912A IRFPS3810 HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/...
Datasheet PDF File IRFPS3810 PDF File

IRFPS3810
IRFPS3810

Overview
PD - 93912A IRFPS3810 HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V G S RDS(on) = 0.
009Ω ID = 170A† Description The HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Super-247™ Absolute Maximum Ratings Parameter ID ...


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