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NE5511279A

Part Number	NE5511279A
Manufacturer	NEC
Description	7.5 V UHF BAND RF POWER SILICON LD-MOS FET
Published	Jul 9, 2007
Detailed Description	NEC'S 7.5 V UHF BAND NE5511279A RF POWER SILICON LD-MOS FET FEATURES • HIGH OUTPUT POWER: Pout = 40.0 dBm TYP., f = 900 ...
Datasheet	NE5511279A PDF File

Overview

NEC'S 7.
5 V UHF BAND NE5511279A RF POWER SILICON LD-MOS FET FEATURES • HIGH OUTPUT POWER: Pout = 40.
0 dBm TYP.
, f = 900 MHz, VDS = 7.
5 V, Pout = 40.
5 dBm TYP.
, f = 460 MHz, VDS = 7.
5 V, • HIGH POWER ADDED EFFICIENCY: ηadd = 48% TYP.
, f = 900 MHz, VDS = 7.
5 V, 5.
7 MAX.
0.
6±0.
15 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 79A (Bottom View) 4.
2 MAX.
Source 1.
5±0.
2 Source 21001 4.
4 MAX.
GL = 18.
5 dB TYP.
, f = 460 MHz, VDS = 7.
5 V, • SURFACE MOUNT PACKAGE: 5.
7 x 5.
7 x 1.
1 mm MAX • SINGLE SUPPLY: VDS = 2.
8 to 8.
0 V 0.
4±0.
15 5.
7 MAX.
0.
8 MAX.
3.
6±0.
2 W • HIGH LINEAR GAIN: GL = 15.
0 dB TYP.
, f = 900 MHz, VDS = 7.
5 V, APPLICATIONS • UHF RADIO SYSTEMS • CELLULAR REPEATERS • TWO-WAY RADIOS ...

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