DatasheetsPDF.com

T431616D

Part Number	T431616D
Manufacturer	TMT
Description	(T431616D/E) 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
Published	Jul 9, 2007
Detailed Description	tm TE CH T431616D/E SDRAM FEATURES Fast access time: 5/6/7 ns • Fast clock rate: 200/166/143 MHz • Self refresh mode:...
Datasheet	T431616D PDF File

Overview

tm TE CH T431616D/E SDRAM FEATURES Fast access time: 5/6/7 ns • Fast clock rate: 200/166/143 MHz • Self refresh mode: standard and low power • Internal pipelined architecture • 512K word x 16-bit x 2-bank • Programmable Mode registers - CAS# Latency: 1, 2, or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: interleaved or linear burst - Burst stop function • Individual byte controlled by LDQM and UDQM • Auto Refresh and Self Refresh • 4096 refresh cycles/64ms • CKE power down mode • JEDEC standard +3.
3V±0.
3V power supply • Interface: LVTTL • 50-pin 400 mil plastic TSOP II package • 60-ball, 6.
4x10.
1mm VFBGA package • Lead Free Package available for both TSOP II and VFBGA •Low Operating Current for T431616E 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM GRNERAL DESCRIPTION The T431616D/E SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits.
It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on ...

Similar Datasheet

T431616A 1M x 16 SDRAM - TM
T431616B 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM - TMT
T431616C 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM - TMT
T431616D (T431616D/E) 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM - TMT
T431616E (T431616D/E) 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM - TMT

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)