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RD02MUS2

Mitsubishi Electric
Part Number RD02MUS2
Manufacturer Mitsubishi Electric
Description RoHS Compliance
Published Jul 12, 2007
Detailed Description MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS2 0.2+/-0.05 (0.22) (0.2...
Datasheet PDF File RD02MUS2 PDF File

RD02MUS2
RD02MUS2

Overview
MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS2 0.
2+/-0.
05 (0.
22) (0.
22) (0.
25) RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DESCRIPTION RD02MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications.
This device have an interal monolithic zener diode from gate to source for ESD protection.
OUTLINE DRAWING 4.
6+/-0.
05 3.
3+/-0.
05 0.
8+/-0.
05 6.
0+/-0.
15 1 4.
9+/-0.
15 1.
0+/-0.
05 2 FEATURES •High power gain: Pout>2W, Gp>16dB @Vdd=7.
2V,f=175MHz,520MHz •High Efficiency:65%typ.
(175MHz) •High Efficiency:65%typ.
(520MHz) •Integrated gate protection diode 3 (0.
25) INDEX MARK (Gate) 0.
2+/-0.
05 0.
9+/-0.
1 Terminal No.
1.
Drain (output) 2.
Source (GND) 3.
Gate (input) Note ( ):center value UNIT:mm APPLICATION For output stage of high power amplifiers In VHF/UHF band mobile radio sets.
RoHS COMPLIANT www.
DataSheet4U.
com RD02MUS2-101,T112 is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after the Lot Marking.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.
Lead in high melting temperature type solders(i.
e.
tin-lead solder alloys containing more than85% lead.
) RD02MUS2 MITSUBISHI ELECTRIC 1/9 17 Jan.
2006 3.
5+/-0.
05 2.
0+/-0.
05 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS2 UNIT V V W W A °C °C °C/W RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input Power Drain Current Junction temperature Storage temperature Thermal resisitance CONDITIONS Vgs=0V Vds=0V Tc=25°C Zg=Zl=50Ω Junction to case RATINGS 30 -5/+10 21.
9 0.
1 1.
5 150 -40 to +125 5.
7 SCHEMATIC DRAWING Note 1: Above parameters are gu...


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