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NESG2031M16

CEL
Part Number NESG2031M16
Manufacturer CEL
Description HIGH FREQUENCY TRANSISTOR
Published Jul 31, 2007
Detailed Description www.DataSheet4U.com NEC's NPN SiGe NESG2031M16 HIGH FREQUENCY TRANSISTOR FEATURES • • HIGH BREAKDOWN VOLTAGE SiGe TECHN...
Datasheet PDF File NESG2031M16 PDF File

NESG2031M16
NESG2031M16

Overview
www.
DataSheet4U.
com NEC's NPN SiGe NESG2031M16 HIGH FREQUENCY TRANSISTOR FEATURES • • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) LOW NOISE FIGURE: NF = 0.
8 dBm at 2 GHz NF = 1.
3 dBm at 5.
2 GHz HIGH MAXIMUM STABLE GAIN: MSG = 21.
5 dB at 2 GHz LOW PROFILE M16 PACKAGE: 6-pin lead-less minimold M16 • • DESCRIPTION NEC's NESG2031M16 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators.
ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS NF Ga NF Ga RF MSG |S21E| P1dB OIP3 fT Cre ICBO DC IEBO hFE Notes: 1.
MSG = S21 S12 2.
Collector to base capacitance when the emitter pin is grounded.
3.
Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %.
2 NESG2031M16 M16 UNITS dB dB dB dB dB dB dBm 15.
0 19.
0 16.
0 MIN TYP 1.
3 10.
0 0.
8 17.
0 21.
5 18.
0 13 23 20 25 0.
15 0.
25 100 100 130 190 260 1.
1 MAX PARAM...


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