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BF423L

Part Number	BF423L
Manufacturer	NXP
Description	(BF421L / BF423L) PNP high-voltage transistors
Published	Aug 17, 2007
Detailed Description	www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF421L; BF423L PNP high-voltage transis...
Datasheet	BF423L PDF File

Overview

www.
DataSheet4U.
com DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF421L; BF423L PNP high-voltage transistors Product speciﬁcation Supersedes data of 1999 Apr 21 2004 Nov 10 www.
DataSheet4U.
com Philips Semiconductors Product speciﬁcation PNP high-voltage transistors FEATURES • Low current (max.
50 mA) • High voltage (max.
300 V) • Available with a higher power rating (830 mW) under type number: BF423.
APPLICATIONS • Primarily intended for telephony applications.
1 handbook, halfpage BF421L; BF423L PINNING PIN 1 2 3 base collector emitter DESCRIPTION DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package.
NPN complement: BF422L.
Fig.
1 2 3 2 1 3 MAM285 Simplified outline (TO-92; SOT54) and symbol.
ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BF421L BF423L LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL VCBO BF421L BF423L VCEO collector-emitter voltage BF421L BF423L VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature ambient temperature Tamb ≤ 25 °C open collector open base − − − − − − − −65 − −65 −300 −250 −5 −50 −100 −100 625 +150 150 +150 V V V mA mA mA mW °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − −300 −250 V V MIN.
MAX.
UNIT SC-43A DESCRIPTION plastic single-ended leaded (through hole) package; 3 leads VERSION SOT54 2004 Nov 10 2 www.
DataSheet4U.
com Philips Semiconductors Product speciﬁcation PNP high-voltage transistors THERMAL CHARACTERISTICS SYMBOL Rth(j-a) Note 1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS Tamb = 25 °C unless otherwise speciﬁed.
SYMBOL ICBO IEBO hFE VCEsat Cre fT Note 1.
Pulse test: tp ≤ 300 µs; δ ≤ 0.
02.
PARAMETER collector-base cut-off current emitter-base cut-off current DC current gain collector-emitter saturation voltage feedback capacitance transition frequency CONDITIONS VCB = −20...

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