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BLF2022-120

Part Number	BLF2022-120
Manufacturer	NXP
Description	UHF push-pull power LDMOS transistor
Published	Aug 17, 2007
Detailed Description	www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2022-120 UHF push-pull power LDMOS transistor Preli...
Datasheet	BLF2022-120 PDF File

Overview

www.
DataSheet4U.
com DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2022-120 UHF push-pull power LDMOS transistor Preliminary specification 2000 Dec 12 www.
DataSheet4U.
com Philips Semiconductors Preliminary specification UHF push-pull power LDMOS transistor FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (HF to 2.
2 GHz).
APPLICATIONS • Common source class-AB operation for PCN and PCS applications in the 2000 to 2200 MHz frequency range.
DESCRIPTION Push-pull silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 4-lead flange packa...

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