GaAlAs on GaAs Infrared Light Emitting Diode
Description
Infrared Light Emitting Diodes
LNA2606L
GaAlAs on GaAs Infrared Light Emitting Diode
Unit: mm
0.8 max.
For optical control systems s Features
High-power output, high-efficiency: PO = 9 mW min. Emitted light spectrum suited for silicon photodetectors Ultra-miniature, thin side-view type package Long lifetime, high reliability
1.95±0.25 3.0±0.3
0.8
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