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AO3405

Alpha & Omega Semiconductors
Part Number AO3405
Manufacturer Alpha & Omega Semiconductors
Description P-Channel MOSFET
Published Nov 20, 2007
Detailed Description www.DataSheet4U.com AO3405 P-Channel Enhancement Mode Field Effect Transistor General Description The AO3405 uses advan...
Datasheet PDF File AO3405 PDF File

AO3405
AO3405

Overview
www.
DataSheet4U.
com AO3405 P-Channel Enhancement Mode Field Effect Transistor General Description The AO3405 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
Standard Product AO3405 is Pb-free (meets ROHS & Sony 259 specifications).
AO3405L is a Green Product ordering option.
AO3405 and AO3405L are electrically identical.
Features VDS (V) = -30V ID = -2.
6 A (V GS = -10V) RDS(ON) < 130mΩ (VGS = -10V) RDS(ON) < 180mΩ (VGS = -4.
5V) TO-236 (SOT-23) Top View G D S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -30 ±12 -2.
6 -2.
2 -30 1.
4 1 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 65 85 43 Max 90 125 60 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AO3405 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=-250µA VGS=-4.
5V, VDS=-5V VGS=-10V, ID=-2.
6A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=-4.
5V, ID=-2A VDS=-5V, ID=-2.
5A 7 137 11 -0.
83 -1 -2.
2 481 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 54 34 12 1.
25 VGS=-4.
5V, VDS=-15V, ID=-2.
5A 1.
75 4.
35 8.
9 VGS=-10V, VDS=-15V, RL=6Ω, RGEN=6Ω IF=-2.
5A, dI/dt=100A/µs 8.
8 23 6.
9 26 15.
6 180 -1.
3 -10 102 130 -1.
8 Min -30 -1 -5 ±100 -2.
3 Typ Max Units V µA nA V A mΩ mΩ mΩ S V A pF pF pF Ω nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On stat...


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