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AP9T18GJ

Advanced Power Electronics
Part Number AP9T18GJ
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Jan 19, 2008
Detailed Description www.DataSheet4U.com AP9T18GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Capable of...
Datasheet PDF File AP9T18GJ PDF File

AP9T18GJ
AP9T18GJ

Overview
www.
DataSheet4U.
com AP9T18GH/J Pb Free Plating Product Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Capable of 2.
5V gate drive ▼ Surface mount package ▼ RoHS Compliant N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 20V 14mΩ 38A G S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 4.
5V Continuous Drain Current, V GS @ 4.
5V Pulsed Drain Current 1 Rating 20 ±16 38 24 140 31.
3 0.
25 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Value 4 110 Units ℃/W ℃/W Data and specifications subject to change without notice 200908052-1/4 www.
DataSheet4U.
com AP9T18GH/J Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min.
20 0.
5 Typ.
0.
1 33 16 3 9 12 80 22 12 280 220 1.
54 Max.
Units 14 28 1.
5 1 25 ±100 25 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω o Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1mA Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VGS=4.
5V, ID=18A VGS=2.
5V, ID=9A VDS=VGS, ID=250uA VDS=5V, ID=18A VDS=20V, VGS=0V VDS=16V ,VGS=0V VGS=±16V ID=18A VDS=16V VGS=4.
5V VDS=10V ID=18A RG=3.
3Ω,VGS=5V RD=0.
56Ω VGS=0V VDS=20V f=1.
0MHz f=1.
0MHz ...


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