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BF199

Fairchild Semiconductor
Part Number BF199
Manufacturer Fairchild Semiconductor
Description NPN RF Transistor
Published May 29, 2008
Detailed Description BF199 BF199 NPN RF Transistor www.DataSheet4U.com 1 TO-92 1. Collector 2. Emitter 3. Base Absolute Maximum Ratings*...
Datasheet PDF File BF199 PDF File

BF199
BF199

Overview
BF199 BF199 NPN RF Transistor www.
DataSheet4U.
com 1 TO-92 1.
Collector 2.
Emitter 3.
Base Absolute Maximum Ratings* TC=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 25 40 4.
0 50 - 55 ~ 150 Units V V V mA °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits.
The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics TC=25°C unless otherwise noted Symbol Off Characteristics V(BR)CEO V(BR)CBO V(BR)EBO ICES hFE VCE(sat) VBE(sat) VBE(on) fT Cre Parameter Test Condition IC = 1.
0mA, IB = 0 IC = 100µA, IE = 0 IE = 10µA, IC = 0 VCE = 30V, IE = 0 IC = 7.
0mA, VCE = 10V IC = 10mA, IB = 5.
0mA IC = 10mA, IB = 5.
0mA IC = 7.
0mA, VCE = 10V IC = 7.
0mA, VCE = 10V, f = 100MHz VCB = 10V, IE = 0, f = 1.
0MHz 38 0.
2 0.
92 0.
925 1100 0.
4 V V V MHz pF Min.
25 40 4.
0 50 Max.
Units V V V nA Collector-Emitter Breakdown Voltage * Collector-Base BreakdownVoltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current gain Bandwidth Product Common-Emitter Ruerse Transfer Capacitance On Characteristics Small Signal Characteristics * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.
0% Thermal Characteristics TA=25°C unless otherwise noted Symbol PD RθJC RθJA Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max.
350 2.
8 125 357 Units mW mW/°C °C/W °C/W ©2002 Fairchild Semiconductor Corporation Rev.
A, September 2002 BF199 Package Dimensions TO-92 4.
58 –0.
15 +0.
25 www.
DataSh...


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