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2SJ291

Hitachi Semiconductor
Part Number 2SJ291
Manufacturer Hitachi Semiconductor
Description Silicon P-Channel MOS FET
Published Aug 23, 2008
Detailed Description 2SJ291 Silicon P-Channel MOS FET November 1996 www.DataSheet4U.com Application High speed power switching Features • ...
Datasheet PDF File 2SJ291 PDF File

2SJ291
2SJ291

Overview
2SJ291 Silicon P-Channel MOS FET November 1996 www.
DataSheet4U.
com Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline TO-220AB D G 1 2 3 1.
Gate 2.
Drain (Flange) 3.
Source S 2SJ291 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current www.
DataSheet4U.
com Avalanche current Symbol VDSS VGSS ID ID(pulse)* IDR IAP* 3 1 Ratings –60 ±20 –20 –80 –20 –20 Unit V V A A A A mJ W °C °C Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at TC = 25°C 3.
Value at Tch = 25°C, Rg ≥ 50 Ω EAR* Tch 3 34 2 Pch* 60 150 –55 to +150 Tstg 2 2SJ291 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current www.
DataSheet4U.
com Symbol Min V(BR)DSS V(BR)GSS IGSS VGS(off) RDS(on) –60 ±20 — — –1.
0 — — Typ — — — — — 0.
05 0.
07 16 2200 1000 300 25 130 320 210 –1.
1 160 Max — — ±10 –250 –2.
25 0.
065 0.
095 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns Test conditions ID = –10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = –50 V, VGS = 0 ID = –1 mA, VDS = –10 V ID = –10 A, VGS = –10 V* ID = –10 A, VGS = –4 V* VDS = –10 V, VGS = 0, f = 1 MHz 1 1 Zero gate voltage drain current IDSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1.
Pulse test |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 10 — — — — — — — — — ID = –10 A, VDS = –10...


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