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2SK3670

Toshiba Semiconductor
Part Number 2SK3670
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOS Type Field Effect Transistor
Published Sep 17, 2008
Detailed Description 2SK3670 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3670 Chopper Regulator and DC−DC Convert...
Datasheet PDF File 2SK3670 PDF File

2SK3670
2SK3670

Overview
2SK3670 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3670 Chopper Regulator and DC−DC Converter Applications Unit: mm z 2.
5V-Gate Drive z Low drain-source ON-resistance: RDS (ON) = 1.
0 Ω (typ.
) z High forward transfer admittance: |Yfs| = 2.
1 S (typ.
) z Low leakage current: IDSS = 100 μA (max) (VDS = 150 V) z Enhancement mode: Vth = 0.
5 to 1.
3 V (VDS = 10 V, ID =200 μA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage DC (Note 1) Drain current Pulse (t ≤ 5s) (Note 1) Pulse (Note 1) Drain power dissipation Single pulse avalanche energy (Note 2) Avalanche ...


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