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K1359

Toshiba Semiconductor
Part Number K1359
Manufacturer Toshiba Semiconductor
Description 2SK1359
Published Oct 7, 2008
Detailed Description 2SK1359 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII ) .5 2SK1359 DC−DC Converter and Motor Driv...
Datasheet PDF File K1359 PDF File

K1359
K1359

Overview
2SK1359 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII ) .
5 2SK1359 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode www.
DataSheet4U.
com Unit: mm : RDS (ON) = 3.
0 Ω (typ.
) : |Yfs| = 2.
0 S (typ.
) : IDSS = 300 μA (max) (VDS = 800 V) : Vth = 1.
5~3.
5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD Tch Tstg Rating 1000 1000 ±30 5 15 125 150 −55~150 Unit V V V A W °C °C 1.
GATE 2.
DRAIN (HEAT SINK) 3.
SOURCE ...


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