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2SB1149

SavantIC
Part Number 2SB1149
Manufacturer SavantIC
Description SILICON POWER TRANSISTOR
Published Feb 21, 2009
Detailed Description SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1149 DESCRIPTION ·...
Datasheet PDF File 2SB1149 PDF File

2SB1149
2SB1149

Overview
SavantIC Semiconductor www.
DataSheet4U.
com Product Specification Silicon PNP Power Transistors 2SB1149 DESCRIPTION ·With TO-126 package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·For use in operating from IC without predriver ,such as hammer driver PINNING(See Fig.
2) PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Ta=25 PD Total power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 15 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -100 -100 -8 -3.
0 -5.
0 1.
3 W UNIT V V V A A SavantIC Semiconductor www.
DataSheet4U.
com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-1.
5A ;IB=-1.
5mA IC=-1.
5A ;IB=-1.
5mA VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-1.
5A ; VCE=-2V IC=-3A ; VCE=-2V 2000 1000 MIN 2SB1149 SYMBOL VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 TYP.
-0.
9 -1.
5 MAX -1.
2 -2.
0 -10 -2.
0 15000 UNIT V V µA mA Switching times ton tstg tf Turn-on time Storage time Fall time IC=-1.
5A ; IB1=-IB2=-1.
5mA VCC?-40V;RL=27B 0.
5 2.
0 1.
0 µs µs µs hFE-1 Classifications M 2000-5000 L 3000-7000 K 5000-15000 2 SavantIC Semiconductor www.
DataSheet4U.
com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1149 Fig.
2 Outline dimensions 3 ...


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