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BD317

SavantIC
Part Number BD317
Manufacturer SavantIC
Description SILICON POWER TRANSISTOR
Published May 9, 2009
Detailed Description SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD317 www.datasheet4u.com DESCRIPTION ·W...
Datasheet PDF File BD317 PDF File

BD317
BD317

Overview
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD317 www.
datasheet4u.
com DESCRIPTION ·With TO-3 package ·High DC current gain ·Excellent safe operating area ·Complement to type BD318 APPLICATIONS ·Designed for high power amplifiers PINNING (See Fig.
2) PIN 1 2 3 Base Emitter Collector Fig.
1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(peak) Base current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 100 100 7 16 20 5 200 -65~200 -65~200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 0.
875 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.
2A ; IB=0 IC=8A ;IB=0.
8A IC=8A ;IB=0.
8A IC=8A ;VCE=2.
0V VCB=100V;IE=0 VEB=7V; IC=0 IC=5A ; VCE=4V IC=10A ; VCE=4V IC=1A ; VCE=20V,f=0.
5MHz 25 15 1.
0 MIN 100 TYP.
www.
datasheet4u.
com BD317 SYMBOL VCEO(SUS) VCEsat VBEsat VBE(on) ICBO IEBO hFE-1 hFE-2 fT MAX UNIT V 1.
0 1.
8 1.
5 1.
0 1.
0 V V V mA mA MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.
datasheet4u.
com BD317 Fig.
2 Outline dimensions 3 ...


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