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AOT430 N-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) = 75V ID = 80 A (VGS = 10V) RDS(ON) < 11.5mΩ (VGS = 10V)
General Description
The AOT430 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applic...
