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FLK027WG

Eudyna Devices
Part Number FLK027WG
Manufacturer Eudyna Devices
Description Ku Band Power GaAs FET
Published Nov 22, 2009
Detailed Description FLK027WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 24.0dBm(Typ.) High Gain: G1dB = 7.0dB(Ty...
Datasheet PDF File FLK027WG PDF File

FLK027WG
FLK027WG


Overview
FLK027WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 24.
0dBm(Typ.
) High Gain: G1dB = 7.
0dB(Typ.
) High PAE: ηadd = 32%(Typ.
) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK027WG is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency.
Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Ra...



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