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FLK057WG

Eudyna Devices
Part Number FLK057WG
Manufacturer Eudyna Devices
Description Ku Band Power GaAs FET
Published Nov 22, 2009
Detailed Description FLK057WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 27.0dBm(Typ.) High Gain: G1dB = 7.0dB(Ty...
Datasheet PDF File FLK057WG PDF File

FLK057WG
FLK057WG

Overview
FLK057WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 27.
0dBm(Typ.
) High Gain: G1dB = 7.
0dB(Typ.
) High PAE: ηadd = 32%(Typ.
) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK057WG is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency.
Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 3.
75 -65 to +175 175 Unit V V W °C °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1.
The drain-source operating voltage (VDS) should not exceed 10 volts.
2.
The forward and reverse gate currents should not exceed 4.
4 and -0.
25 mA respectively with...


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