2SK3582TV
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK3582TV
For ECM
Application for Ultra-compact ECM
0.2±0.05 1.2±0.05 0.3±0.05 3 0.8±0.05
Unit: mm
1.2±0.05
0.8±0.1
Absolute Maximum Ratings (Ta=25°C)
Characteristic Gate-Drain voltage Gate Current Drain power dissipation (Ta = 25°C) Junction Temperature Storage temperature rang...
