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APT11N80BC3

Advanced Power Technology
Part Number APT11N80BC3
Manufacturer Advanced Power Technology
Description Super Junction MOSFET
Published Mar 27, 2010
Detailed Description APT11N80BC3 www.DataSheet4U.com 800V 11A 0.45Ω Super Junction MOSFET C O OLMOS Power Semiconductors TO-247 • Ultra l...
Datasheet PDF File APT11N80BC3 PDF File

APT11N80BC3
APT11N80BC3

Overview
APT11N80BC3 www.
DataSheet4U.
com 800V 11A 0.
45Ω Super Junction MOSFET C O OLMOS Power Semiconductors TO-247 • Ultra low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 Package MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL dv/ dt D G S All Ratings: TC = 25°C unless otherwise specified.
APT11N80BC3 UNIT Volts Amps Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 800 11 33 ±20 ±30 156 1.
25 -55 to 150 260 50 11 0.
2 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
Drain-Source Voltage slope (VDS = 640V, ID = 11A, TJ = 125°C) Repetitive Avalanche Current Repetitive Avalanche Energy 7 7 Volts Watts W/°C °C V/ns Amps mJ IAR EAR EAS Single Pulse Avalanche Energy 470 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 800 0.
39 0.
5 0.
45 20 200 ±100 2.
1 3 3.
9 (VGS = 10V, ID = 7.
1A) Ohms µA nA Volts Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V, TJ = 150°C) Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 680µA) CAUTION: These Devices are Sensitive to Electrostatic Discharge.
Proper Handling Procedures Should Be Followed.
APT Website - http://www.
advancedpower.
com "COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG.
"COOLMOS" is a trademark of Infineon Technologies AG" 050-7136 Rev B 4-2004 DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT11...


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