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FDS6930B

Fairchild Semiconductor
Part Number FDS6930B
Manufacturer Fairchild Semiconductor
Description Dual N-Channel MOSFET
Published Aug 24, 2010
Detailed Description FDS6930B Dual N-Channel Logic Level PowerTrench® MOSFET March 2010 FDS6930B Dual N-Channel Logic Level PowerTrench® MO...
Datasheet PDF File FDS6930B PDF File

FDS6930B
FDS6930B

Overview
FDS6930B Dual N-Channel Logic Level PowerTrench® MOSFET March 2010 FDS6930B Dual N-Channel Logic Level PowerTrench® MOSFET Features ■ 5.
5 A, 30 V.
RDS(ON) = 38 mΩ @ VGS = 10 V RDS(ON) = 50 mΩ @ VGS = 4.
5 V ■ Fast switching speed ■ Low gate charge ■ High performance trench technology for extremely low RDS(ON) ■ High power and current handling capability General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
D2 D2 D1 D1 SO-8 Pin 1 G2 S2 G1 S1 5 4 6 3 7 2 8 1 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) Ratings 30 ± 20 5.
5 20 2 1.
6 1 0.
9 –55 to 150 78 40 Package Marking and Ordering Information Device Marking FDS6930B Device FDS6930B Reel Size 13" Tape width 12mm Units V V A W °C °C/W °C/W Quantity 2500 units ©2010 Fairchild Semiconductor Corporation 1 FDS6930B Rev.
A1 www.
fairchildsemi.
com FDS6930B Dual N-Channel Logic Level PowerTrench® MOSFET Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Gate–Source Leakage On Characteristics (Note 2) VGS = 0 V, ID = 250 µA ID =...


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