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SBP13007S

WINSEMI SEMICONDUCTOR
Part Number SBP13007S
Manufacturer WINSEMI SEMICONDUCTOR
Description High Voltage Fast-Switching NPN Power Transistor
Published Apr 14, 2011
Detailed Description SBP13007S High Voltage Fast-Switching NPN Power Transistor Features ◆ Very High Switching Speed ◆ High Voltage Capabili...
Datasheet PDF File SBP13007S PDF File

SBP13007S
SBP13007S

Overview
SBP13007S High Voltage Fast-Switching NPN Power Transistor Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply.
Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc = 25℃ Total Dissipation at Ta = 25℃ Operation Junction Temperature Storage Temperature tP = 5ms Test Conditions VBE = 0 IB = 0 IC = 0 Value 700 400 9.
0 8.
0 16 4.
0 8.
0 80 2.
1 - 40 ~ 150 - 40 ~ 150 Units V V V A A A A W ℃ ℃ Tc: Case temperature (good cooling) Ta: Ambient temperature (without heat sink) Thermal Characteristics Symbol www.
DataSheet4U.
com RθJc RθJA Parameter Thermal Resistance Junction to Case Thermal Resistance Junctio...


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