Power MOSFET
Description
Preliminary Technical Information
TrenchTM HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode
IXFA130N10T IXFP130N10T
Symbol
VDSS VDGR
VGSS VGSM
ID25 ILRMS IDM
IA EAS
PD
TJ TJM Tstg
TL TSOLD
FC Md
Weight
Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M
Continuous Transient
Maximum Ratings
100
V
100
...
Similar Datasheet