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IXFH160N15T

IXYS Corporation
Part Number IXFH160N15T
Manufacturer IXYS Corporation
Description Power MOSFET
Published May 30, 2011
Detailed Description Preliminary Technical Information Power MOSFET TrenchHVTM HiPerFETTM N-Channel Enhancement Mode Avalanche Rated IXFH160...
Datasheet PDF File IXFH160N15T PDF File

IXFH160N15T
IXFH160N15T

Overview
Preliminary Technical Information Power MOSFET TrenchHVTM HiPerFETTM N-Channel Enhancement Mode Avalanche Rated IXFH160N15T VDSS ID25 RDS(on) = 150V = 160A ≤ 9.
6mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS dV/dt Pd TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C Maximum 150 150 ± 30 160 75 430 5 1 10 830 -55 .
.
.
+175 175 -55 .
.
.
+175 Ratings V V V A A A A J V/ns W °C °C °C °C °C Nm/lb.
in.
g TO-247 (IXFH) G D S (TAB) G = Gate S = Source D = Drain TAB = Drain 1.
6 mm (0.
062 in.
) from case...


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