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2SA1986

Inchange Semiconductor

Power Transistor


Description
isc Silicon PNP Power Transistor 2SA1986 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) ·Complement to Type 2SC5358 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity au...



Inchange Semiconductor

2SA1986

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