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2SB1182

Rohm
Part Number 2SB1182
Manufacturer Rohm
Description Medium power Transistor
Published Mar 22, 2005
Detailed Description Medium power transistor (32V, 2A) 2SB1182 / 2SB1240 Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A /...
Datasheet PDF File 2SB1182 PDF File

2SB1182
2SB1182

Overview
Medium power transistor (32V, 2A) 2SB1182 / 2SB1240 Features 1) Low VCE(sat).
VCE(sat) = 0.
5V (Typ.
) (IC/IB = 2A / 0.
2A) 2) Complements 2SD1758 / 2SD1862.
Structure Epitaxial planar type PNP silicon transistor Dimensions (Unit : mm) 2SB1182 6.
5±0.
2 5.
1+−00.
.
21 C0.
5 2.
3+−00.
.
21 0.
5±0.
1 2SB1240 6.
8±0.
2 2.
5±0.
2 4.
4±0.
2 1.
0 0.
9 5.
5+−00.
.
31 1.
5±0.
3 0.
9 1.
5 2.
5 9.
5±0.
5 0.
75 0.
9 0.
65±0.
1 2.
3±0.
2 2.
3±0.
2 0.
55±0.
1 1.
0±0.
2 (1) (2) (3) ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter 0.
65Max.
14.
5±0.
5 0.
5±0.
1 (1) (2) (3) 2.
54 2.
54 1.
05 0.
45±0.
1 ROHM : ATV (1) Emitter (2) Collector (3) Base Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Collect...


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