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2SC2610

Hitachi Semiconductor
Part Number 2SC2610
Manufacturer Hitachi Semiconductor
Description Silicon NPN Triple Diffused Transistor
Published Mar 22, 2005
Detailed Description 2SC2610 Silicon NPN Triple Diffused Application • High voltage amplifier • TV Video output Outline TO-92 (1) 1. Emitt...
Datasheet PDF File 2SC2610 PDF File

2SC2610
2SC2610

Overview
2SC2610 Silicon NPN Triple Diffused Application • High voltage amplifier • TV Video output Outline TO-92 (1) 1.
Emitter 2.
Collector 3.
Base 3 2 1 2SC2610 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 300 300 5 100 800 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 300 300 5 — 30 — 50 — Typ — — — — — — 80 — Max — — — 1.
0 200 1.
5 — 4.
0 V MHz pF Unit V V V µA Test conditions I C = 10 µA, IE = 0 I...


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