DatasheetsPDF.com

2SC2655

Part Number	2SC2655
Manufacturer	Toshiba Semiconductor
Description	Silicon NPN TRANSISTOR
Published	Mar 22, 2005
Detailed Description	2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Power Amplifier Applications Power Switchi...
Datasheet	2SC2655 PDF File

Overview

2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Power Amplifier Applications Power Switching Applications Industrial Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.
5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW • High-speed switching: tstg = 1.
0 μs (typ.
) • Complementary to 2SA1020.
Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 2 A Base current IB 0.
5 A JEDEC TO-92MOD Collector power dissipation Junction temperature Storage temperature range PC 900 m...

Similar Datasheet

2SC2603 NPN SILICON TRANSISTOR - Micro Electronics
2SC2608 NPN Transistor - INCHANGE
2SC2608 SILICON POWER TRANSISTOR - SavantIC
2SC2610 Silicon NPN Triple Diffused Transistor - Hitachi Semiconductor
2SC2610 Silicon NPN Triple Diffused Transistor - Renesas
2SC2611 NPN Transistor - INCHANGE
2SC2611 Silicon NPN Transistor - Hitachi Semiconductor
2SC2611 SILICON POWER TRANSISTOR - SavantIC
2SC2611 Silicon NPN transistor - BLUE ROCKET ELECTRONICS
2SC2612 NPN Transistor - INCHANGE

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)