Trench MOS Barrier Schottky Rectifier
Description
VBT1045BP
www.vishay.com
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
Ultra Low VF = 0.41 V at IF = 5 A
FEATURES
TMBS®
TO-263AB
K
Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
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