Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Description
New Product
VBT1045C
Vishay General Semiconductor
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.34 V at IF = 2.5 A
TMBS ®
TO-263AB
FEATURES
Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
2
K
Not recommended...
Similar Datasheet
