Schottky Barrier Diode
Description
5.0±0.2NotNeRewcDoemsimgennsded for 8.0±0.2
Schottky Barrier Diode
RBQ10T65A
Application General rectification
Features 1) Cathode common type. 2) Low IR 3) High reliability
Construction Silicon epitaxial planar
Dimensions (Unit : mm)
4.5±00..31
10.0±00..31
φ3.2±0.2
2.8±00..21
0.4 0.2
15.0±
12.0±0.2
①
1.2 1.3 0.8
2.45±0.5 2.45±0.5
(1) (2) (3)
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