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BDY24

Part Number	BDY24
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Dec 10, 2012
Detailed Description	isc Silicon NPN Power Transistor BDY24 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 90V(Min.) ·Collec...
Datasheet	BDY24 PDF File

Overview

isc Silicon NPN Power Transistor BDY24 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 90V(Min.
) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.
6V(Max)@ IC = 2A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for LF signal powe amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 6 A IB Base Current 3 A PC Collector Power Dissipation@TC=25℃ 87.
5 W TJ Junction Temperature 200 ℃ Tstg Storage Tempe...

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