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2N6661

Seme LAB
Part Number 2N6661
Manufacturer Seme LAB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Mar 22, 2005
Detailed Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6661 • VDSS = 90V , ID = 0.9A, RDS(ON) = 4.0Ω • Fast Switching • Low Threshol...
Datasheet PDF File 2N6661 PDF File

2N6661
2N6661

Overview
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6661 • VDSS = 90V , ID = 0.
9A, RDS(ON) = 4.
0Ω • Fast Switching • Low Threshold Voltage (Logic Level) • Low CISS • Integral Source-Drain Body Diode • Hermetic Metal TO39 Package • High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VDS Drain – Source Voltage 90V VGS Gate – Source Voltage ±20V ID Continuous Drain Current TC = 25°C 0.
9A IDM Pulsed Drain Current (1) 3.
0A PD Total Power Dissipation at TC ≤ 25°C 5W De-rate TC > 25°C 40mW/°C PD Total Power Dissipation at TA ≤ 25°C 725mW De-rate TA > 25°C 5.
8mW/°C TJ Operating Temperature Range -55 to +150°C Tstg Storage Tempera...


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