N-Channel MOSFET
Description
FDMS8622 N-Channel Shielded Gate PowerTrench® MOSFET
August 2018
FDMS8622
N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 16.5 A, 56 m
Features
Shielded Gate MOSFET Technology
Max rDS(on) = 56 m at VGS = 10 V, ID = 4.8 A Max rDS(on) = 88 m at VGS = 6 V, ID = 3.9 A High performance trench technology for extremely low rDS(on) High power and...
Fairchild Semiconductor
FDMS8622 PDF File
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