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2SA1967

Sanyo Semicon Device
Part Number 2SA1967
Manufacturer Sanyo Semicon Device
Description NPN Triple Diffused Planar Silicon Transistor
Published Mar 22, 2005
Detailed Description Ordering number:5182 NPN Triple Diffused Planar Silicon Transistor 2SA1967 High-Voltage Amplifier, High-Voltage Switchi...
Datasheet PDF File 2SA1967 PDF File

2SA1967
2SA1967

Overview
Ordering number:5182 NPN Triple Diffused Planar Silicon Transistor 2SA1967 High-Voltage Amplifier, High-Voltage Switching Applications Features · High breakdown voltage (VCEO min=–900V).
· Small Cob (Cob typ=2.
2pF).
· High reliability (Adoption of HVP process).
Package Dimensions unit:mm 2010C [2SA1967] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Collector Cutoff Current Emitter Cu...


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