DatasheetsPDF.com

ICE60N130

Icemos
Part Number ICE60N130
Manufacturer Icemos
Description N-Channel Enhancement Mode MOSFET
Published Oct 8, 2013
Detailed Description Preliminary Data Sheet ICE60N130 ICE60N130 N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Ch...
Datasheet PDF File ICE60N130 PDF File

ICE60N130
ICE60N130


Overview
Preliminary Data Sheet ICE60N130 ICE60N130 N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Optimized design for hard switching SMPS topologies HALOGEN Product Summary ID rDS(on) FREE TA=25oC 23A Max Min Typ Typ BVDSS @Tjmax ID=250uA 650V VGS=10V 0.
13Ω VDS=480V 82nC D Qg G S T0220 ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS.
THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE.
THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
Standard Metal...



Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)