N-Channel Enhancement Mode MOSFET
Description
Preliminary Data Sheet
ICE60N150 ICE60N150 N-Channel
Enhancement Mode MOSFET
Features
Low rDS(on) Ultra Low Gate Charge High dv/dt capability High Unclamped Inductive Switching (UIS) capability High peak current capability Optimized design for hard switching SMPS topologies
HALOGEN
Product Summary ID V(BR)DSS rDS(on)
FREE
TA=25oC ID=250uA VGS=...
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